IRFP360 N channel

Description: The IRFP360 is an N-channel power MOSFET designed for high-power switching applications in power supplies, inverters, motor controls, and other electronic circuits. It features low on-resistance and high current handling capability, making it suitable for applications where efficiency, reliability, and robustness are critical. The MOSFET is housed in a TO-247 package, which allows for effective heat dissipation and enhances overall performance under high load conditions. Key Features:

• N-channel power MOSFET
• Low on-resistance for efficient power switching
• High current handling capability
• Fast switching speed
• Robust and reliable performance
• TO-247 package for excellent thermal management
• RoHS compliant

Technical Specifications:

• Drain-Source Voltage (V_DS): 400V
• Continuous Drain Current (I_D): 23A
• Pulsed Drain Current (I_DM): 92A
• Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): 280W
• On-Resistance (R_DS(on)): 0.09Ω (at V_GS = 10V, I_D = 16A)
• Gate Charge (Q_g): 170nC (typical)
• Input Capacitance (C_iss): 4000pF (typical)
• Operating Temperature Range: -55°C to +175°C
• Package Type: TO-247

Applications:

• High-power switching applications
• Switching power supplies
• Motor controls
• Inverters
• Industrial and automotive electronics
• Battery management systems

Datasheet: For detailed technical information, refer to the IRFP360 N-Channel Power MOSFET Datasheet.